Place of Origin:
CHINA
Nazwa handlowa:
KACISE
Orzecznictwo:
CE
Model Number:
KSGYR111M-S
Attribute | Value |
---|---|
Supply voltage VDDM | +2.7V~+3.6V |
Bias ZRL | ±1°/s (0 LSB Typ) |
Rate range I | ±400°/s |
Non-linearity NI | ±0.5%FS |
Cross-axis sensitivity CS | ±5% |
The KSGYR111M-S Digital Quartz MEMS GYRO Chip features superior bias output stability and low noise. This digital quartz gyroscope is based on quartz MEMS technology and manufactured using semiconductor processing techniques.
Power Supply Parameters | ||
---|---|---|
Supply voltage VDDM | +2.7V~+3.6V | |
Supply voltage for interface VDDI | +1.65V~+3.6V | |
Product Performance | ||
Scale factor So | 70 LSB/(°/s) ±2% | 16 bits, Ta=+25℃ |
17920 LSB/(°/s) ±2% | 24 bits, Ta=+25℃ | |
Scale factor variation over temperature Spt | ±3% | VDDM=3V, Ta=+25℃ reference |
Bias ZRL | ±1°/s (0 LSB Typ) | Ta=+25℃ |
Bias variation over temperature A ZRLta | ±0.25°/h | -10℃~+50℃, Ta=+25℃ reference |
Bias variation over temperature B ZRLtb | ±1°/h | -20℃~+80℃, Ta=+25℃ reference |
Bias temperature coefficient ZRLs | 0.0016(°/s)/℃ (Typ) | VDDM = 3V, Average of absolute value, ΔT=1℃ |
Rate range I | ±400°/s | |
Non-linearity NI | ±0.5%FS | Ta=+25℃ |
Cross-axis sensitivity CS | ±5% | Ta=+25℃ |
Current consumption Iop1 | 900μA Typ | |
Sleep current Iop3 | 3μA Typ | |
Noise density Nd | 0.0015 (°/s)/√Hz | @ 10Hz, LPF default setting |
Angle random walk N | 0.065 °/√h | |
Environmental Specifications | ||
Operating temperature TOPR | -20℃~+80℃ | |
Storage temperature TSTG | -40℃~+85℃ |
Unit: mm
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